The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2018

Filed:

Sep. 09, 2016
Applicant:

Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;

Inventors:

Misato Boyama, Kiyosu, JP;

Shingo Totani, Kiyosu, JP;

Takashi Kawai, Kiyosu, JP;

Yoshiki Saito, Kiyosu, JP;

Naoyuki Okita, Kiyosu, JP;

Assignee:

TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 27/15 (2006.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/62 (2013.01);
Abstract

To provide a light-emitting unit having a semiconductor light-emitting device with a good responsiveness and a sufficient light emission quantity. The light-emitting unit comprises a plurality of semiconductor light-emitting devices, an n-wiring electrode and a p-wiring electrode respectively connecting the semiconductor light-emitting devices in parallel, an n-pad electrode connected to the n-wiring electrode, and a p-pad electrode connected to the p-wiring electrode. At least one of the Group III nitride semiconductor light-emitting devices has a light emission volume of 1 μmto 14 μm.


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