The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Mar. 10, 2016
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Keiji Ikeda, Tokyo, JP;
Tsutomu Tezuka, Ibaraki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/028 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/14614 (2013.01); H01L 27/14616 (2013.01); H01L 31/028 (2013.01); H01L 27/14632 (2013.01); H01L 27/14634 (2013.01); H01L 27/14649 (2013.01);
Abstract
According to one embodiment, a CMOS image sensor includes a photoelectric conversion element and an amplifier transistor. The photoelectric conversion element converts incident light into an electric signal. The amplifier transistor has a heterojunction in which a Ge layer and an SiGeSn layer are joined together, as a channel region and amplifies the electric signal resulting from conversion by the photoelectric conversion element.