The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2018

Filed:

Feb. 06, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Young Sun Oh, Yongin-si, KR;

Yi Tae Kim, Hwaseong-si, KR;

Jung Chak Ahn, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 27/1462 (2013.01); H01L 27/1463 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01);
Abstract

An image sensor includes a substrate having a first pixel region and a second pixel region adjacent to the first pixel region, a device isolation layer between the first pixel region and the second pixel region and isolating the first pixel region and the second pixel region from each other, a first transistor disposed in the first pixel region, a second transistor disposed in the second pixel region, and a wiring structure electrically connecting the first transistor and the second transistor. The device isolation layer has a deep trench isolation (DTI) structure which extends from a top surface toward a bottom surface of the substrate.


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