The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Jun. 02, 2016
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Takao Saitoh, Sakai, JP;
Seiji Kaneko, Sakai, JP;
Yutaka Takamaru, Sakai, JP;
Yohsuke Kanzaki, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
A semiconductor device () includes a thin-film transistor () including a gate electrode (), an oxide semiconductor layer (), a gate insulating layer (), a source electrode (), and a drain electrode (); a metal oxide layer () including a conductor region () and formed from an oxide film from which the oxide semiconductor layer () is also formed; an interlayer insulating layer () covering the thin-film transistor and the metal oxide layer (); and a transparent conductive layer () disposed on the interlayer insulating layer and electrically connected to the drain electrode, wherein the oxide semiconductor layer () and the metal oxide layer () contain indium, tin, and zinc, and the transparent conductive layer () overlaps at least a portion of the conductor region () with the interlayer insulating layer () therebetween.