The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Feb. 11, 2015
Uri Cohen, Palo Alto, CA (US);
Uri Cohen, Palo Alto, CA (US);
Other;
Abstract
One embodiment is a semiconductor device including: at least one patterned dielectric layer having at least one opening therein, said at least one opening having sidewalls and bottom; at least one barrier layer disposed over the sidewalls and bottom; a first metallic layer disposed over the at least one barrier layer; a second metallic layer disposed over the first metallic layer; and a metallic filling layer disposed over the second metallic layer; wherein: the first metallic layer is continuous over the sidewalls and bottom, has a thickness in a range from about 10 Å to no more than 40 Å over a sidewall of the at least one opening; and the second metallic layer, and the metallic filling layer are selected from a group consisting of Cu, Ag, and alloys containing one or more of these metals.