The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Jun. 23, 2015
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventor:
Naomi Fukumaki, Yokkaichi, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/4763 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 21/3105 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31051 (2013.01); H01L 21/7682 (2013.01); H01L 21/76802 (2013.01); H01L 23/5222 (2013.01); H01L 23/53295 (2013.01); H01L 23/53238 (2013.01);
Abstract
In one embodiment, a method of manufacturing a semiconductor device includes forming a plug in a first insulator, forming a first film on the first insulator and the plug, and forming an opening in the first film. The method further includes forming a second insulator in the opening to form an air gap in the opening, removing the first film after forming the second insulator, to expose the plug, and forming an interconnect on the exposed plug.
Quick Actions:
Fukumaki, Naomi. (2018). Semiconductor device and method of manufacturing the same (U.S. Patent No. 10096485). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10096485
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile