The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2018

Filed:

Oct. 06, 2017
Applicant:

Lapis Semiconductor Co., Ltd., Yokohama, JP;

Inventor:

Hiroyuki Tanikawa, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/30 (2006.01); G11C 16/08 (2006.01); H02M 3/07 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G11C 16/08 (2013.01); H02M 3/07 (2013.01);
Abstract

A power supply circuit and a semiconductor storage device that can achieve low power consumption of the power supply circuit that includes a charge pump circuit are provided. The semiconductor storage device includes a charge pump unit which generates and outputs a boosted voltage by boosting a source voltage, a voltage monitoring unit that performs comparison and determination on magnitudes of a divided voltage obtained by dividing the boosted voltage and a predetermined reference voltage, a charge pump control unit that causes the charge pump unit to operate when the divided voltage is equal to or lower than the reference voltage and causes the charge pump unit to stop when the divided voltage is higher than the reference voltage based on a result of the comparison and determination, and a voltage monitoring control unit that causes the voltage monitoring unit to intermittently stop.


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