The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2018

Filed:

Mar. 27, 2017
Applicants:

National University of Singapore, Singapore, SG;

Agency for Science, Technology and Research, Singapore, SG;

Inventors:

Wei Du, Singapore, SG;

Tao Wang, Singapore, SG;

Christian Albert Nijhuis, Singapore, SG;

Hong-Son Chu, Singapore, SG;

Lin Wu, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 5/00 (2006.01); B82Y 40/00 (2011.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
G02B 5/008 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); Y10S 977/81 (2013.01); Y10S 977/811 (2013.01); Y10S 977/892 (2013.01); Y10S 977/949 (2013.01);
Abstract

A method of producing electronic plasmons by applying a bias to a molecular tunnel junction to excite plasmons, in which the molecular tunnel junction contains a top metallic electrode formed of a eutectic metal alloy and a metal oxide, a bottom metallic electrode formed of a transition metal, and a self-assembled monolayer formed of a plurality of organic molecules disposed between the top metallic electrode and the bottom metallic electrode. Also disclosed are a molecular tunnel junction for producing electronic plasmons and a method for preparing such a molecular tunnel junction.


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