The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2018

Filed:

Aug. 31, 2016
Applicant:

National Sun Yat-sen University, Kaohsiung, TW;

Inventor:

Ming-Chi Chou, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 33/02 (2006.01); C30B 15/04 (2006.01); C30B 29/34 (2006.01); G01T 1/202 (2006.01);
U.S. Cl.
CPC ...
C30B 33/02 (2013.01); C30B 15/04 (2013.01); C30B 29/34 (2013.01); G01T 1/2023 (2013.01);
Abstract

A method of producing a double-doped scintillation crystal is provided. Czochralski method is used to grow a double-doped single crystal boule. The double-doped single crystal boule is a single crystal boule of rare-earth silicate double-doped with cerium (Ce) and calcium (Ca) or magnesium (Mg). The double-doped single crystal boule is subjected to a thermal annealing process in a furnace. A yield of pixel samples of the double-doped scintillation crystal is improved after a processing process, and the present invention achieves low producing cost, high yield, less crystal fragmentations, high luminescence intensity and short decaying time.


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