The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Dec. 01, 2016
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Katsunori Danno, Obu, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A SiC single crystal comprising no polycrystals, and no cracking other than at the side edges is provided. A method for producing SiC single crystal in which seed crystal held at bottom end face of holding shaft is contacted with Si—C solution having temperature gradient to grow SiC single crystal, wherein the contour of the end face of the holding shaft is smaller than the contour of the top face of the seed crystal, the top face of the seed crystal has center section held in contact with the entire surface of the end face of the holding shaft and outer peripheral section that is not in contact with the end face of the holding shaft, and carbon sheet is disposed on the top face of the seed crystal so as to cover at least the outer peripheral section, among the center section and the outer peripheral section.