The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2018

Filed:

Apr. 18, 2017
Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventors:

Hiroshi Shimizu, Kariya, JP;

Mitsunori Kimura, Kariya, JP;

Kengo Mochiki, Kariya, JP;

Yuu Yamahira, Kariya, JP;

Tetsuya Matsuoka, Kariya, JP;

Kazuma Fukushima, Kariya, JP;

Yasuyuki Ohkouchi, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/158 (2006.01); H02M 7/5387 (2007.01); H02P 27/06 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 3/158 (2013.01); H02M 7/5387 (2013.01); H02M 2001/0051 (2013.01); H02M 2001/0054 (2013.01); H02P 27/06 (2013.01);
Abstract

A power conversion apparatus includes a first semiconductor element pair that includes a MOSFET made of wide bandgap semiconductor material and a wide bandgap diode made of wide bandgap semiconductor material which is reverse parallel-connected to the MOSFET, a second semiconductor element pair that includes an IGBT made of silicon semiconductor material and a silicon diode made of silicon semiconductor material which is reverse parallel-connected to the IGBT, and a control circuit section for controlling switching operation of the MOSFET and the IGBT. The first and second semiconductor element pairs are connected in series to each other.


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