The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2018

Filed:

Jan. 20, 2017
Applicant:

Luminit Llc, Torrance, CA (US);

Inventors:

Alkan Gulses, Gardena, CA (US);

Russell Kurtz, Palos Verdes Estates, CA (US);

Assignee:

Luminit LLC, Torrance, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/062 (2006.01); H01S 5/343 (2006.01); H01S 5/183 (2006.01); H01S 5/14 (2006.01); H01S 3/08 (2006.01); H01S 5/04 (2006.01); H01S 3/10 (2006.01);
U.S. Cl.
CPC ...
H01S 5/06246 (2013.01); H01S 3/08045 (2013.01); H01S 3/08068 (2013.01); H01S 5/041 (2013.01); H01S 5/14 (2013.01); H01S 5/141 (2013.01); H01S 5/145 (2013.01); H01S 5/183 (2013.01); H01S 5/18358 (2013.01); H01S 5/18361 (2013.01); H01S 5/18391 (2013.01); H01S 5/34313 (2013.01); H01S 3/10053 (2013.01); H01S 5/18363 (2013.01); H01S 2301/04 (2013.01);
Abstract

The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InGaAs. The CGH is composed of AlGaAs.


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Gulses, Alkan. (2018). Laser diode enhancement device (U.S. Patent No. 10090639). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10090639

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