The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2018

Filed:

Nov. 11, 2016
Applicant:

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventors:

Yuta Saito, Tsukuba, JP;

Junji Tominaga, Tsukuba, JP;

Reiko Kondo, Tsukuba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 45/00 (2006.01); H01L 27/105 (2006.01); H01L 29/82 (2006.01); C23C 14/34 (2006.01); C30B 23/02 (2006.01); C30B 29/46 (2006.01); C30B 29/68 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); C23C 14/34 (2013.01); C30B 23/025 (2013.01); C30B 29/46 (2013.01); C30B 29/68 (2013.01); G11C 11/161 (2013.01); H01L 27/105 (2013.01); H01L 29/82 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/1625 (2013.01);
Abstract

A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, SbTe, BiTe, BiTe, BiSe and BiSeas a main component, and which is oriented in a certain crystal orientation.


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