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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10090408 B1

PDFFull Text
Date of Patent:
Oct. 02, 2018

Filed:

Aug. 01, 2017

Semiconductor device and method of manufacturing semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Ryo Maeta, Matsumoto, JP;

Toshiaki Sakata, Matsumoto, JP;

Shunji Takenoiri, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Thien F Tran

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 21/2251 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 29/0634 (2013.01); H01L 29/0688 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/66712 (2013.01); H01L 29/66143 (2013.01); H01L 29/66333 (2013.01); H01L 29/7395 (2013.01); H01L 29/872 (2013.01);
Abstract

A SJ-MOSFET includes a parallel pn layer in which an n-type drift region and a p-type partition region are alternately arranged repeatedly along a direction parallel to a base main-surface. The n-type drift region and the p-type partition region have total impurity amounts that are roughly the same and widths that are basically constant over an entire depth direction. The n-type drift region is configured to have an n-type impurity concentration profile in which an impurity concentration of a portion on the drain-side is higher than an impurity concentration of a portion on the source-side by ΔC. The p-type partition region is configured to have a p-type impurity concentration profile in which an impurity concentration of a portion on the drain-side is higher than an impurity concentration of a portion on the source-side by ΔC, and an impurity concentration of part of the portion on the source-side is relatively low.

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