The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2018
Filed:
Feb. 26, 2015
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Alcatel Lucent, Paris, FR;
Rene Escoffier, La Buisse, FR;
Commissariat à l'énergie atomique et aux energies alternatives, Paris, FR;
ALCATEL LUCENT, Paris, FR;
Abstract
An electronic device having at least a first HEMT transistor and bias circuit able to at least reverse bias the first HEMT transistor by applying an electric voltage Vof a positive value between a source of the first HEMT transistor and a drain of the first HEMT transistor. The first HEMT transistor is able to be ON when a value of an electric voltage Vbetween a gate of the first HEMT transistor and the drain of the first HEMT transistor is higher than a value of a threshold voltage Vof the first HEMT transistor. The electronic device has, during a forward biasing, a behavior similar to that of a forward biased or reverse biased Zener diode.