The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2018

Filed:

Dec. 19, 2017
Applicant:

Princeton Infrared Technologies, Inc., Monmouth Junction, NJ (US);

Inventor:

Martin H. Ettenberg, Princeton, NJ (US);

Assignee:

Princeton Infrared Technologies, Inc., Monmouth Junction, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/146 (2006.01); H01L 29/66 (2006.01); H01L 29/808 (2006.01); H01L 31/18 (2006.01); H01L 31/0304 (2006.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14679 (2013.01); H01L 27/1461 (2013.01); H01L 27/1465 (2013.01); H01L 27/14609 (2013.01); H01L 27/14652 (2013.01); H01L 27/14694 (2013.01); H01L 29/66901 (2013.01); H01L 29/808 (2013.01); H01L 31/03046 (2013.01); H01L 31/105 (2013.01); H01L 31/1844 (2013.01);
Abstract

A photodiode pixel structure for imaging short wave infrared (SWIR) and visible light built in a planar structure and may be used for one dimensional and two dimensional photodiode arrays. The photodiode arrays may be hybridized to a read out integrated circuit (ROIC), for example, a silicon complementary metal-oxide-semiconductor (CMOS) circuit. The photodiode in each pixel is buried under the surface and does not directly contact the ROIC amplification circuit. Disconnecting the photodiode from the ROIC amplification circuit enables low dark current as well as double correlated sampling in the pixel.


Find Patent Forward Citations

Ettenberg, Martin. (2018). Low noise ingaas photodiode array (U.S. Patent No. 10090356). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10090356

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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