The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2018

Filed:

Jul. 08, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ae-Hee Choi, Yongin-si, KR;

Sang-ki Kim, Yongin-si, KR;

Ahyun Jo, Seoul, KR;

Kyo-Seon Choi, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/00 (2006.01); H01L 23/58 (2006.01); H01L 29/10 (2006.01); H01L 21/66 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2006.01); H01L 23/498 (2006.01); H01L 23/544 (2006.01); H01L 23/50 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 22/14 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/3128 (2013.01); H01L 24/48 (2013.01); H01L 2224/0225 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05016 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/94 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06565 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/3512 (2013.01);
Abstract

A semiconductor device includes a semiconductor chip having a semiconductor substrate with chip and boundary regions, and an integrated circuit on the chip region. A center pad is provided on the chip region and on the integrated circuit, and a boundary pad is provided on the boundary region. The semiconductor device further includes a first lower insulating structure having a contact hole exposing the center pad, a second lower insulating structure, at the same vertical level as the first lower insulating structure, and having a first opening exposing the boundary pad to an outside of the first lower insulating structure, a conductive pattern including a contact portion, a conductive line portion, and a bonding pad portion, and an upper insulating structure formed on the first lower insulating structure and the conductive pattern and having a second opening exposing the bonding pad portion to the outside of the semiconductor chip. The first lower insulating structure has a top surface positioned at a higher vertical level than that of the second lower insulating structure.


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