The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2018
Filed:
Oct. 03, 2016
Sensor Electronic Technology, Inc., Columbia, SC (US);
Maxim S. Shatalov, Columbia, SC (US);
Mikhail Gaevski, West Columbia, SC (US);
Igor Agafonov, Columbia, SC (US);
Robert M. Kennedy, Columbia, SC (US);
Alexander Dobrinsky, Loudonville, NY (US);
Michael Shur, Latham, NY (US);
Emmanuel Lakios, Elgin, SC (US);
Sensor Electronic Technology, Inc., Columbia, SC (US);
Abstract
A metal-organic chemical vapor deposition (MOCVD) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a MOCVD growth process used to epitaxially grow semiconductor layers. In one embodiment, the substrate and/or the susceptor can be profiled with a shape that improves temperature uniformity during the MOCVD growth process. The profiled shape can be formed with material that provides a desired temperature distribution to the substrate that is in accordance with a predetermined temperature profile for the substrate for a particular MOCVD process.