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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10090168 B1

PDFFull Text
Date of Patent:
Oct. 02, 2018

Filed:

Jan. 19, 2016

Plasma etching method

Applicant:

Zeon Corporation, Chiyoda-ku, Tokyo, JP;

Inventor:

Hirotoshi Inui, Tokyo, JP;

Assignee:

ZEON CORPORATION, Chiyoda-ku, Tokyo, JP;

Attorney:

Kenja IP Law PC

Primary Examiner:

David S Blum

Int. Cl.
CPC ...
H01L 21/311 (2006.01); C09K 13/00 (2006.01); H01L 21/02 (2006.01); H01L 27/11551 (2017.01); H01L 27/11578 (2017.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); C09K 13/00 (2013.01); H01L 21/022 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/31144 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01);
Abstract

The present invention is a plasma etching method comprising subjecting a silicon-containing film to plasma etching using a process gas, the process gas comprising a linear saturated fluorohydrocarbon compound represented by a formula (1), and a gaseous fluorine-containing compound (excluding the compound represented by the formula (1)) that functions as a fluorine radical source under plasma etching conditions, wherein x represents 3 or 4, y represents an integer from 5 to 9, and z represents an integer from 1 to 3. The present invention provides a plasma etching method that can selectively etch the silicon-containing film with respect to the mask, and form a hole or a trench having a good shape within a short time.CHF  (1)

Find Patent Forward Citations

Inui, Hirotoshi. (2018). Plasma etching method (U.S. Patent No. 10090168). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10090168

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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