The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2018

Filed:

Jul. 25, 2017
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Keiichiro Matsuo, Yokohama, JP;

Yusaku Asano, Yokohama, JP;

Kazuhito Higuchi, Yokohama, JP;

Kazuo Shimokawa, Yokohama, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/301 (2006.01); H01L 21/46 (2006.01); H01L 21/78 (2006.01); H01L 21/306 (2006.01); B01J 23/42 (2006.01); B01J 23/46 (2006.01); B01J 23/50 (2006.01); B01J 23/52 (2006.01); C09K 13/00 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); B01J 23/42 (2013.01); B01J 23/464 (2013.01); B01J 23/50 (2013.01); B01J 23/52 (2013.01); C09K 13/00 (2013.01); H01L 21/308 (2013.01); H01L 21/78 (2013.01);
Abstract

An etching method according to an embodiment includes forming a catalyst layer made of a first noble metal or the combination of the second noble metal and the metal other than noble metals on a surface made of a semiconductor, the catalyst layer including a first portion and a second portion, the first portion covering at least a part of the surface, the second portion being located on the first portion, having an apparent density lower than that of the first portion, and being thicker than the first portion; and supplying an etchant to the catalyst layer to cause an etching of the surface with an assist from the catalyst layer as a catalyst.


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