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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10090137 B1

PDFFull Text
Date of Patent:
Oct. 02, 2018

Filed:

Mar. 25, 2014

In—ce—o-based sputtering target and method for producing the same

Applicant:

Sumitomo Metal Mining Co., Ltd., Tokyo, JP;

Inventor:

Keiichi Sato, Ome, JP;

Assignee:

SUMITOMO METAL MINING CO., LTD., Tokyo, JP;

Attorney:

Kratz, Quintos & Hanson, LLP

Primary Examiner:

John Joseph Brayton

Int. Cl.
CPC ...
C23C 14/14 (2006.01); H01J 37/34 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); C04B 35/01 (2006.01); C04B 35/626 (2006.01); B22F 3/16 (2006.01); B22F 9/02 (2006.01); B22F 9/04 (2006.01); C23C 14/58 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3429 (2013.01); B22F 3/16 (2013.01); B22F 9/026 (2013.01); B22F 9/04 (2013.01); C04B 35/01 (2013.01); C04B 35/6261 (2013.01); C23C 14/086 (2013.01); C23C 14/3414 (2013.01); C23C 14/5806 (2013.01); B22F 2302/25 (2013.01); B22F 2304/10 (2013.01); C04B 2235/3229 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/785 (2013.01); C04B 2235/786 (2013.01); C04B 2235/80 (2013.01); C04B 2235/9646 (2013.01);
Abstract

[Object] To provide: an In—Ce—O-based sputtering target capable of suppressing nodules and abnormal discharge over a long period, even though the Ce content based on an atomic ratio of Ce/(In+Ce) is 0.16 to 0.40, at which a high-refractive-index film can be obtained; and a method for producing the In—Ce—O-based sputtering target. [Solving Means] The sputtering target is an In—Ce—O-based sputtering target which is made of an In—Ce—O-based oxide sintered body containing indium oxide as a main component and cerium, and which is used in producing a transparent conductive film having a refractive index of 2.1 or more. The target is characterized in that the Ce content based on the atomic ratio of Ce/(In+Ce) is 0.16 to 0.40, and that cerium oxide particles having a particle diameter of 5 μm or less are dispersed in the In—Ce—O-based oxide sintered body.

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