The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2018
Filed:
Mar. 11, 2018
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
Provided is a programming method of a nonvolatile memory device including a plurality of memory cells. The programming method of the nonvolatile memory device includes: programming a first set of memory cells of the plurality of memory cells to a target state based on a primary program voltage such that a threshold voltage distribution of the first set of memory cells is formed; grouping the first set of memory cells into a plurality of cell groups at least one cell group having a different threshold voltage distribution width from others, based on program speeds of the first set of memory cells; and reprogramming remaining cell groups other than a first cell group that is programmed to the target state among the plurality of cell groups, to the target state based on a plurality of secondary program voltages determined based on threshold voltage distribution widths of the plurality of cell groups.