The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2018

Filed:

Feb. 01, 2016
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Takahiko Ishizu, Kanagawa, JP;

Kazuma Furutani, Kanagawa, JP;

Keita Sato, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 8/08 (2006.01); G11C 8/12 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
G11C 8/08 (2013.01); G11C 5/063 (2013.01); G11C 5/148 (2013.01); G11C 8/12 (2013.01); G11C 5/14 (2013.01);
Abstract

A novel semiconductor device, a semiconductor device with low power consumption, or a semiconductor device capable of retaining data for a long period is provided. The semiconductor device includes a first selection circuit connected to a plurality of first memory circuits, a second selection circuit connected to a plurality of second memory circuits, and a third selection circuit connected to a plurality of third memory circuits, thereby being capable of conducting power gating of each of the first memory circuits, each of the second memory circuits, or each of the third memory circuits separately. Accordingly, the memory circuits to which data is not written or from which data is not read can be kept in a state where power supply thereto is stopped, so that power consumption of the semiconductor device can be reduced.


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