The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2018

Filed:

May. 05, 2017
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Alvin Xu, Jiangsu, CN;

Qingjie Ma, Shanghai, CN;

Yang Wang, Shanghai, CN;

Yan He, Shanghai, CN;

Jun Ma, Shanghai, CN;

Zhenghao Cui, Beijing, CN;

Jingwei Xu, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 1/56 (2006.01); G05F 1/567 (2006.01); G05F 3/30 (2006.01);
U.S. Cl.
CPC ...
G05F 1/56 (2013.01); G05F 1/567 (2013.01); G05F 3/30 (2013.01);
Abstract

Methods, apparatus, systems and articles of manufacture for negative output voltage active clamping using a floating bandgap reference and temperature compensation are disclosed. An example load switch includes a floating bandgap reference circuit to generate a bandgap reference voltage. A resistor divider is to generate a resistor divider voltage. A temperature compensator to apply a temperature compensation current to the resistor divider to create a temperature compensated resistor divider voltage. A power transistor is to be enabled when the temperature compensated resistor divider voltage is less than the bandgap reference voltage. The example load switch can work under negative output voltage clamping and get better accuracy drain to source clamped voltage of power transistor for inductive load condition.


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