The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2018
Filed:
Sep. 06, 2016
Toshiba Memory Corporation, Minato-ku, JP;
Juan Felipe Torres, Kawasaki, JP;
Kei Matsuoka, Kawasaki, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
An apparatus according to embodiments detects locations of faults in a multilayer semiconductor (MLS). The apparatus comprises a laser source that outputs a laser beam, an optical system that directs the laser beam selectively onto a target region in the MLS to generate an irradiated zone in the MLS, a stage and a scanner that control a relative position between the irradiated zone and the MLS so that the irradiated zone moves along the target region, a controller system that measures electrical signals or electrical signal changes induced by a temperature increase in the MLS, and identifies a location of the target region and locations of faults in the MLS based on the measured electrical signal or the measured electrical signal changes. The target region is made of a material of which thermal conductivity is higher than that of a material around the target region and has a structure penetrating from shallow layers to deep layers of the MLS.