The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2018
Filed:
Aug. 23, 2013
Toyo Kohan Co., Ltd., Tokyo, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Takashi Koshiro, Yamaguchi, JP;
Hironao Okayama, Yamaguchi, JP;
Teppei Kurokawa, Yamaguchi, JP;
Kouji Nanbu, Yamaguchi, JP;
Toyo Kohan Co., Ltd., Tokyo, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
An objective of the present invention is to provide a copper substrate for epitaxial growth, which has higher biaxial crystal orientation, and a method for manufacturing the same. The substrate for epitaxial growth of the present invention contains a biaxially crystal-oriented copper layer, wherein the full width at half maximum Δϕ of a peak based on the pole figure of the copper layer is within 5° and the tail width Δβ of the peak based on the pole figure is within 15° Such a substrate for epitaxial growth is manufactured by a 1step of performing heat treatment of a copper layer so that Δϕ is within 6° and the tail width Δβ is within 25°, and after the 1step, a 2step of performing heat treatment of the copper layer at a temperature higher than the temperature for heat treatment in the 1step, so that Δϕ is within 5° and the tail width Δβ is within 15°.