The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

Sep. 08, 2017
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Kentaro Ikeda, Kawasaki, JP;

Takenori Yasuzumi, Yokohama, JP;

Kohei Hasegawa, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/081 (2006.01); H01L 29/20 (2006.01); H01L 23/528 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H03K 17/08104 (2013.01); H01L 23/528 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H01L 29/7827 (2013.01); H01L 29/872 (2013.01);
Abstract

A semiconductor device according to an embodiment includes a normally-off transistor having a first source, a first drain, and a first gate; a normally-on transistor having a second source electrically connected to the first drain, a second drain, and a second gate, a capacitor having a first end and a second end, the second end being electrically connected to the second gate, a first diode having a first anode electrically connected between the second end and the second gate and having a first cathode electrically connected to the second source, a first resistor provided between the first end and the first gate, and a second diode having a second anode electrically connected to the first end and having a second cathode electrically connected to the first gate, the second diode being provided in parallel with the first resistor.


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