The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

Jul. 10, 2015
Applicants:

David W. Jensen, Marion, IA (US);

Steven E. Koenck, Cedar Rapids, IA (US);

Robert G. Brown, Hyattsville, MD (US);

Matilda G. Livadaru, Marion, IA (US);

Inventors:

David W. Jensen, Marion, IA (US);

Steven E. Koenck, Cedar Rapids, IA (US);

Robert G. Brown, Hyattsville, MD (US);

Matilda G. Livadaru, Marion, IA (US);

Assignee:

ROCKWELL COLLINS, INC., Cedar Rapids, IA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/10 (2006.01); H01S 5/00 (2006.01); H01S 5/40 (2006.01); H01S 5/50 (2006.01); G02B 27/01 (2006.01);
U.S. Cl.
CPC ...
H01S 5/105 (2013.01); G02B 27/0172 (2013.01); G02B 27/0189 (2013.01); H01S 5/005 (2013.01); H01S 5/4025 (2013.01); H01S 5/5027 (2013.01);
Abstract

An optical system is described. The optical system has an optical amplifier array. The optical amplifier array has an array of optical amplifiers. Each optical amplifier has an optical amplifier region including a semiconductor active region having a direct electronic band gap with a conduction band edge. The semiconductor active region is embedded within a photonic crystal having an electromagnetic band gap having photon energies overlapping the energy of the conduction band edge of the electronic band gap such that spontaneous emission of photons in the semiconductor active region is suppressed.


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