The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

Oct. 22, 2015
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Takahiro Kawakami, Kanagawa, JP;

Teruaki Ochiai, Kanagawa, JP;

Shuhei Yoshitomi, Kanagawa, JP;

Takuya Hirohashi, Kanagawa, JP;

Mako Motoyoshi, Kanagawa, JP;

Yohei Momma, Kanagawa, JP;

Junya Goto, Kanagawa, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/505 (2010.01); H01M 4/36 (2006.01); H01M 4/131 (2010.01); H01M 4/1391 (2010.01);
U.S. Cl.
CPC ...
H01M 4/505 (2013.01); H01M 4/131 (2013.01); H01M 4/1391 (2013.01); H01M 4/366 (2013.01); H01M 2220/30 (2013.01);
Abstract

To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.


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