The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

Jan. 31, 2017
Applicant:

Sumitomo Chemical Company, Limited, Tokyo, JP;

Inventors:

Taichiro Konno, Hitachi, JP;

Hajime Fujikura, Hitachi, JP;

Shusei Nemoto, Hitachi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01); H01L 33/18 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/0066 (2013.01); H01L 33/0075 (2013.01); H01L 33/12 (2013.01); H01L 33/18 (2013.01);
Abstract

A nitride semiconductor template includes a substrate, an AlN layer that is formed on the substrate and that includes Cl, and a nitride semiconductor layer formed on the AlN layer. In the AlN layer, a concentration of the Cl in a region on a side of the substrate is higher than that in a region on a side of the nitride semiconductor layer. Also, a light-emitting element includes the nitride semiconductor template, and a light-emitting layer formed on the nitride semiconductor template.


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