The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Aug. 31, 2015
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Yoshihiko Tani, Sakai, JP;
Tetsuya Hanamoto, Sakai, JP;
Masanori Watanabe, Sakai, JP;
Akihiro Kurisu, Sakai, JP;
Katsuji Iguchi, Sakai, JP;
Hiroyuki Kashihara, Sakai, JP;
Tomoya Inoue, Sakai, JP;
Toshiaki Asai, Sakai, JP;
Hirotaka Watanabe, Sakai, JP;
Sharp Kabushiki Kaisha, Sakai, JP;
Abstract
A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.