The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

Nov. 30, 2015
Applicant:

Solarcity Corporation, San Mateo, CA (US);

Inventors:

Jianming Fu, Palo Alto, CA (US);

Zheng Xu, Pleasanton, CA (US);

Jiunn Benjamin Heng, Los Altos Hills, CA (US);

Chentao Yu, Sunnyvale, CA (US);

Assignee:

Tesla, Inc., Palo Alto, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/074 (2012.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 31/072 (2012.01); H01L 31/075 (2012.01);
U.S. Cl.
CPC ...
H01L 31/074 (2013.01); H01L 31/02167 (2013.01); H01L 31/022466 (2013.01); H01L 31/022475 (2013.01); H01L 31/072 (2013.01); H01L 31/075 (2013.01); H01L 31/1804 (2013.01); H01L 31/1868 (2013.01); Y02E 10/547 (2013.01); Y02E 10/548 (2013.01); Y02P 70/521 (2015.11);
Abstract

One embodiment of the present invention provides a solar cell. The solar cell includes a Si base layer, a passivation layer situated above the Si base layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a first transparent-conducting-oxide (TCO) layer situated above the heavily doped a-Si layer, a back-side electrode situated below the Si base layer, and a front-side electrode situated above the first TCO layer. The first TCO layer comprises at least one of: GaInO, GaInSnO, ZnInO, and ZnInSnO.


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