The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Apr. 20, 2015
Applicant:
Solarcity Corporation, San Mateo, CA (US);
Inventors:
Chentao Yu, Sunnyvale, CA (US);
Zheng Xu, Pleasanton, CA (US);
Jiunn Benjamin Heng, San Jose, CA (US);
Jianming Fu, Palo Alto, CA (US);
Assignee:
Tesla, Inc., Palo Alto, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0201 (2013.01); H01L 31/02167 (2013.01); H01L 31/02168 (2013.01); H01L 31/022425 (2013.01); H01L 31/068 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
One embodiment of the present invention provides a solar cell. The solar cell includes a substrate, a first heavily doped crystalline-Si (c-Si) layer situated above the substrate, a lightly doped c-Si layer situated above the first heavily doped crystalline-Si layer, a second heavily doped c-Si layer situated above the lightly doped c-Si layer, a front side electrode grid situated above the second heavily doped c-Si layer, and a backside electrode grid situated on the backside of the substrate.