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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10084095 B1

PDFFull Text
Date of Patent:
Sep. 25, 2018

Filed:

Mar. 01, 2016

Thin film transistor, method for manufacturing the same, and array substrate

Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Xiaolong Li, Beijing, CN;

Zheng Liu, Beijing, CN;

Xiaoyong Lu, Beijing, CN;

Chunping Long, Beijing, CN;

Huijuan Zhang, Beijing, CN;

Assignee:

BOE Technology Group Co., Ltd., Beijing, CN;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Kevin M Picardat

Int. Cl.
CPC ...
H01L 31/0312 (2006.01); H01L 29/786 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 21/04 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78609 (2013.01); H01L 21/0262 (2013.01); H01L 21/02527 (2013.01); H01L 21/02598 (2013.01); H01L 21/02609 (2013.01); H01L 21/02664 (2013.01); H01L 21/043 (2013.01); H01L 29/045 (2013.01); H01L 29/1602 (2013.01); H01L 29/66045 (2013.01); H01L 29/78621 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01);
Abstract

The embodiments of present disclosure provide a thin film transistor, a method for manufacturing the same, and an array substrate. The thin film transistor comprises an active layer provided on a substrate, the active layer including a middle channel region, a first high resistance region and a second high resistance region provided respectively on external sides of the middle channel region, a source region provided on an external side of the first high resistance region and a drain region provided on an external side of the second high resistance region, wherein a base material of the active layer is diamond single crystal. According to the thin film transistor, the method for manufacturing the same, and the array substrate provided in the embodiments of present disclosure, by providing high resistance regions on external sides of the middle channel region of the active layer, the carrier mobility is reduced and the leakage current of the thin film transistor made of single crystalline diamond is effectively suppressed.

Find Patent Forward Citations

Li, Xiaolong. (2018). Thin film transistor, method for manufacturing the same, and array substrate (U.S. Patent No. 10084095). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10084095

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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