The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Feb. 24, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jae-Hyun Yoo, Suwon-si, KR;
Kwan-Young Kim, Seoul, KR;
Jin-Hyun Noh, Seoul, KR;
Kee-Moon Chun, Seongnam-si, KR;
Yong-Woo Jeon, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a first well disposed in a substrate and including a first impurity of a first conductivity type, a second well disposed in the substrate, including a second impurity of a second conductivity type different from the first conductivity type, and having first to third portions, and a gate structure formed on the first well and the second well, wherein the second portion is disposed between the first portion and the third portion, the first portion and the third portion are formed deeper than the second portion, and concentration of the second impurity of the first portion and the third portion is greater than concentration of the second impurity of the second portion.