The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

Jul. 24, 2017
Applicant:

Hewlett-packard Development Company, L.p., Houston, TX (US);

Inventors:

Ning Ge, Palo Alto, CA (US);

Leong Yap Chia, Singapore, SG;

Pin Chin Lee, Singapore, SG;

Jose Jehrome Rando, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/332 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66575 (2013.01); H01L 29/66659 (2013.01); H05K 2203/013 (2013.01);
Abstract

In some examples, a semiconductor device includes a substrate, a first doped region formed in the substrate, a second doped region around and spaced apart from the first doped region, and a channel between the first and second doped regions and formed using a gate ring on the substrate as a mask. A gate is formed over only a portion of the channel, the gate being a portion of the gate ring.


Find Patent Forward Citations

Ge, Ning. (2018). Semiconductor device comprising a gate formed from a gate ring (U.S. Patent No. 10084062). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10084062

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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