The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Sep. 14, 2015
Denso Corporation, Kariya, Aichi-pref., JP;
Yoshinori Tsuchiya, Kariya, JP;
Shinichi Hoshi, Kariya, JP;
Masaki Matsui, Kariya, JP;
Kenji Itoh, Nagakute, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
In a semiconductor device, a gate insulating film is provided with a multi-layer structure including a first insulating film and a second insulating film. The first insulating film is formed of an insulating film containing an element having an oxygen binding force larger than that of an element contained in the second insulating film, and the total charge amount is increased. Specifically, by performing oxygen anneal, it is possible to perform the step of supplying oxygen into an aluminum oxide film and increase the total charge amount. This allows a negative fixed charge density in the gate insulating film in the vicinity of an interface with a GaN layer to be set to a value of not less than 2.5×10cmand allows a normally-off element to be reliably provided.