The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Aug. 24, 2017
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jin Bum Kim, Seoul, KR;
Gyeom Kim, Hwaseong-si, KR;
Seok Hoon Kim, Suwon-si, KR;
Tae Jin Park, Yongin-si, KR;
Jeong Ho Yoo, Seongnam-si, KR;
Cho Eun Lee, Pocheon-si, KR;
Hyun Jung Lee, Suwon-si, KR;
Sun Jung Kim, Suwon-si, KR;
Dong Suk Shin, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes: a substrate having an active region; a gate structure disposed in the active region; source/drain regions respectively formed within portions of the active region disposed on both sides of the gate structure; a metal silicide layer disposed on a surface of each of the source/drain regions; and contact plugs disposed on the source/drain regions and electrically connected to the source/drain regions through the metal silicide layer, respectively. The metal silicide layer is formed so as to have a monocrystalline structure.