The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

Nov. 29, 2017
Applicant:

Gwangju Institute of Science and Technology, Gwangju, KR;

Inventors:

Chang Mo Kang, Gwangju, KR;

Dong Seon Lee, Gwangju, KR;

Duk Jo Kong, Gwangju, KR;

Soo Young Choi, Gwangju, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 27/32 (2006.01); H01L 23/00 (2006.01); H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 33/06 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 27/3211 (2013.01); H01L 24/26 (2013.01); H01L 27/3246 (2013.01); H01L 33/0016 (2013.01); H01L 33/06 (2013.01); H01L 33/42 (2013.01); H01L 33/62 (2013.01); H01L 33/382 (2013.01); H01L 33/387 (2013.01);
Abstract

Disclosed is a micro display. Each of display portions constituting the micro display includes an individual active layer and p-type semiconductor layer which are on each of a plurality of n-type semiconductors which are each configured in a line form. Consequently, a plurality of light emitting structures are formed on a common n-type semiconductor provided in a form of a single string, and a crossbar structure in which a positive electrode pattern perpendicular to a disposition direction of the common n-type semiconductor is disposed is formed. As a result, a micro display in which a plurality of light emitting structures can be individually controlled can be realized.


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