The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Apr. 19, 2017
Soitec, Bernin, FR;
Soitec, Bernin, FR;
Abstract
A method for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters comprises providing a substrate including a medium, a flow layer disposed on the medium, and a plurality of strained crystalline semiconductor islands having an initial lattice parameter arranged on the flow layer. The strained semiconductor islands are selectively treated so as to form a first group of strained islands having a first lateral expansion potential, and a second group of strained islands having a second lateral expansion potential that is different from the first lateral expansion potential. The substrate is heat treated at a temperature at or above a glass transition temperature of the flow layer to cause differentiated relaxation of the islands of the first and second groups, such that a lattice parameter of the first group of relaxed islands differs from a lattice parameter of the second group of relaxed islands.