The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

Jun. 19, 2014
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Xiaodi Liu, Beijing, CN;

Gang Wang, Beijing, CN;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1214 (2013.01); H01L 27/127 (2013.01); H01L 27/1233 (2013.01); H01L 27/1259 (2013.01); H01L 29/786 (2013.01); H01L 29/78696 (2013.01);
Abstract

The present invention provides a complementary thin film transistor and a manufacturing method thereof, an array substrate and a display apparatus, relates to the field of manufacturing technology of thin film transistor, and can solve the problem that active layer materials of first and second thin film transistors in a complementary thin film transistor of the prior art have influence with each other. The manufacturing method of the present invention comprises steps of: forming a pattern comprising an active layer of a first thin film transistor and a protective layer on a base by a patterning process, and the protective layer is at least located above the active layer of the thin film transistor; and forming a pattern of an active layer of a second thin film transistor on the base subjected to above step by a patterning process. The present invention may be applied to various circuits and systems.


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