The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Mar. 17, 2017
Toshiba Memory Corporation, Tokyo, JP;
Kouji Matsuo, Aichi, JP;
Toshiba Memory Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a substrate, a semiconductor layer, first electrodes, data storage regions, first conductive regions, contacts and second conductive regions. The first electrodes are formed in the semiconductor layer arrayed in a first direction and a second direction and penetrating the insulator films and the semiconductor films in a third direction. The data storage regions are provided between each of the semiconductor films and each of the first electrodes. The first conductive regions are provided at one end of each of the semiconductor films in the first direction. The contacts are connected to one end of one of the first conductive regions in the second direction, and connection parts between each of the contacts and the first conductive regions are formed stepwise along the second direction. The second conductive regions are provided at the other end of the semiconductor layer in the first direction.