The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

Jul. 21, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Tae-Joong Song, Seongnam-si, KR;

Jung-Han Kim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 27/02 (2006.01); H03K 3/356 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0928 (2013.01); H01L 27/0207 (2013.01); H01L 27/092 (2013.01); H03K 3/356156 (2013.01);
Abstract

First and second active regions are doped with different types of impurities, and extend in a first direction and spaced apart from each other in a second direction. First and third gate structures, which are on the first active region and a first portion of the isolation layer between the first and second active regions, extend in the second direction and are spaced apart from each other in the first direction. Second and fourth gate structures, which are on the second active region and the first portion, extend in the second direction, are spaced apart from each other in the first direction, and face and are spaced apart from the first and third gate structures, respectively, in the second direction. First to fourth contacts are on portions of the first to fourth gate structures, respectively. The first and fourth contacts are connected, and the second and third contacts are connected.


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