The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

Sep. 04, 2017
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Tsuneo Ogura, Kamakura, Kanagawa, JP;

Tomoko Matsudai, Shibuya, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 27/06 (2006.01); H01L 21/324 (2006.01); H01L 29/739 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01); H01L 29/868 (2006.01); H01L 21/762 (2006.01); H01L 27/07 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 21/762 (2013.01); H01L 27/0635 (2013.01); H01L 27/0761 (2013.01); H01L 29/0615 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/66325 (2013.01); H01L 29/739 (2013.01); H01L 29/7397 (2013.01); H01L 29/868 (2013.01);
Abstract

A semiconductor device includes first and second electrodes, a first semiconductor region between the first and second electrodes, a second semiconductor region between the first semiconductor region and the second electrode, a third semiconductor region between the first semiconductor region and the second electrode, a fourth semiconductor region between the first semiconductor region and the first electrode, a third electrode between the first electrode and the first semiconductor region, a first insulating film between the third electrode and both the first electrode and the first semiconductor region, a fifth semiconductor region between the fourth semiconductor region and the first electrode and in contact with the first electrode, a sixth semiconductor region between the fourth semiconductor region and the first electrode and in contact with the first electrode, and a seventh semiconductor region between the fourth semiconductor region and the first insulating film and in contact with the first semiconductor region.


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