The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Dec. 22, 2014
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); C04B 35/01 (2006.01); C04B 35/453 (2006.01); C04B 35/645 (2006.01); C04B 41/00 (2006.01); C04B 41/80 (2006.01); C23C 14/10 (2006.01); C23C 14/34 (2006.01); C23C 14/56 (2006.01); H01L 21/02 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/786 (2006.01); B29C 31/00 (2006.01); H01L 29/66 (2006.01); C04B 111/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3429 (2013.01); B29C 31/008 (2013.01); C04B 35/01 (2013.01); C04B 35/453 (2013.01); C04B 35/645 (2013.01); C04B 35/6455 (2013.01); C04B 41/009 (2013.01); C04B 41/0072 (2013.01); C04B 41/80 (2013.01); C23C 14/10 (2013.01); C23C 14/3414 (2013.01); C23C 14/564 (2013.01); H01L 21/0242 (2013.01); H01L 21/02422 (2013.01); H01L 21/02488 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/45 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); C04B 2111/00844 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/658 (2013.01); C04B 2235/662 (2013.01); C04B 2235/666 (2013.01); C04B 2235/77 (2013.01); H01J 2237/332 (2013.01);
Abstract
One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×10atoms/cm, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by HO or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.