The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

May. 09, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Michael D. Willwerth, Campbell, CA (US);

David Palagashvili, Mountain View, CA (US);

Valentin N. Todorow, Palo Alto, CA (US);

Stephen Yuen, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01J 37/32 (2006.01); H05B 6/10 (2006.01); H01L 21/67 (2006.01); C23C 14/22 (2006.01); C23C 16/44 (2006.01); H01F 21/12 (2006.01); H05B 6/02 (2006.01);
U.S. Cl.
CPC ...
H01J 37/321 (2013.01); C23C 14/22 (2013.01); C23C 16/44 (2013.01); H01F 21/12 (2013.01); H01J 37/32321 (2013.01); H01J 37/32522 (2013.01); H01J 37/32623 (2013.01); H01J 37/32935 (2013.01); H01L 21/67017 (2013.01); H01L 21/67069 (2013.01); H05B 6/02 (2013.01); H05B 6/108 (2013.01); H01J 2237/327 (2013.01); H01J 2237/334 (2013.01);
Abstract

A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a process for tuning a plasma processing chamber is provided that include determining a position of a plasma within the processing chamber, selecting an inductance and/or position of an inductor coil coupled to a lid heater that shifts the plasma location from the determined position to a target position, and plasma processing a substrate with the inductor coil having the selected inductance and/or position.


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