The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Jan. 06, 2017
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Nippon Steel & Sumitomo Metal Corporation, Tokyo, JP;
Motohisa Kado, Gotemba, JP;
Hironori Daikoku, Susono, JP;
Kazuhiko Kusunoki, Tokyo, JP;
Kazuaki Seki, Tokyo, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
Provided is a method for producing a SiC single crystal having a concave growth surface and containing no inclusions, even when conducting large diameter crystal growth. This is achieved by a method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient such that the temperature decreases from the interior toward the liquid level, to cause crystal growth of a SiC single crystal, wherein the seed crystal holding shaft has a shaft portion and a seed crystal holding portion at the bottom end of the shaft portion, and the ratio of the diameter Dof the shaft portion to the diameter Dof the seed crystal holding portion (D/D) is no greater than 0.28.