The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

Jun. 25, 2013
Applicant:

Analog Devices, Inc., Norwood, MA (US);

Inventors:

Li Chen, Belmont, MA (US);

Thomas Kieran Nunan, Carlisle, MA (US);

Kuang L. Yang, Newton, MA (US);

Jeffrey A. Gregory, Malden, MA (US);

Assignee:

Analog Devices, Inc., Norwood, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81C 1/00 (2006.01); H01L 21/02 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0029 (2013.01); B81C 1/00238 (2013.01); B81C 1/00349 (2013.01); H01L 21/02126 (2013.01); H01L 25/0657 (2013.01); H01L 2224/81801 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1461 (2013.01);
Abstract

One or more conductive shielding plates are formed in a standard ASIC wafer top metal layer, e.g., for blocking cross-talk from MEMS device structure(s) on the MEMS wafer to circuitry on the ASIC wafer when the MEMS device is capped directly by the ASIC wafer in a wafer-level chip scale package. Generally speaking, a shielding plate should be at least slightly larger than the MEMS device structure it is shielding (e.g., a movable MEMS structure such as an accelerometer proof mass or a gyroscope resonator), and the shielding plate cannot be in contact with the MEMS device structure during or after wafer bonding. Thus, a recess is formed to ensure that there is sufficient cavity space away from the top surface of the MEMS device structure. The shielding plate is electrically conductive and can be biased, e.g., to the same voltage as the opposing MEMS device structure in order to maintain zero electrostatic attraction force between the MEMS device structure and the shielding plate.


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