The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Jan. 04, 2017
Renesas Electronics Corporation, Tokyo, JP;
Shinichi Koyama, Tokyo, JP;
Takeshi Kusunoki, Tokyo, JP;
Wei Zhou, Tokyo, JP;
Hiromasa Suzuki, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
A semiconductor device capable of preventing deterioration of a transistor caused by a flow of an overcurrent is provided. According to an embodiment, a semiconductor chip includes a first transistor provided between a high-potential side voltage terminal to which a constant voltage generated by reducing a power-supply voltage is supplied and an output terminal, a second transistor provided between a low-potential side voltage terminal to which a ground voltage is supplied and the output terminal, a control circuit controlling turning-on/off of the first and second transistors, a boosting circuit boosting the power-supply voltage by using a voltage of the output terminal to generate an output voltage, and an overvoltage detection circuit detecting an overvoltage of a power-supply line that couples the high-potential side voltage terminal and the first transistor to each other. The control circuit performs control to turn off the second transistor, when the overvoltage has been detected.