The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2018

Filed:

Aug. 15, 2016
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Research & Business Foundation, Sungkyunkwan University, Suwon-si, Gyeonggi-do, KR;

Inventors:

Kiyoung Lee, Seoul, KR;

Jinseong Heo, Seoul, KR;

Woojong Yu, Suwon-si, KR;

Yongseon Shin, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 29/66 (2006.01); H01L 21/04 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/02527 (2013.01); H01L 21/02565 (2013.01); H01L 21/042 (2013.01); H01L 29/1606 (2013.01); H01L 29/247 (2013.01); H01L 29/267 (2013.01); H01L 29/66045 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/78681 (2013.01); H01L 29/78684 (2013.01); H01L 29/78693 (2013.01);
Abstract

A graphene electronic device includes a gate insulating layer on a conductive substrate, a channel layer on the gate insulating layer, and a source electrode on one end of the channel layer and a drain electrode on another end of the channel layer. The channel layer includes a semiconductor layer and a graphene layer in direct contact with the semiconductor layer, and the graphene layer includes a plurality of graphene islands spaced apart from each other.


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